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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2369/2SK2370
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters)
3.0 0.2
1.0
15.7 MAX 4 4.7 MAX. 1.5
FEATURES
* Low On-Resistance
2SK2370: RDS(on) = 0.4 (VGS = 10 V, ID = 10 A)
20.0 0.2
* Low Ciss Ciss = 2400 pF TYP. * High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage(2SAK2369/2370) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 C) Total Power Dissipation (TA = 25 C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 30 20 80 140 3.0 150 20 285 V V A A W W C A mJ
1
2
3
19 MIN.
3.0 0.2
2.2 0.2 5.45
1.0 0.2 5.45
4.5 0.2
6.0
0.6 0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
-55 to +150 C MP-88
Drain
** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0
Body Diode Gate
Source
Document No. TC-2507 (O. D. No. TC-8066) Date Published January 1995 P Printed in Japan
(c)
7.0
2.8 0.1
2SK2369: RDS(on) = 0.35 (VGS = 10 V, ID = 10 A)
1995
2SK2369/2SK2370
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-State Resistance SYMBOL RDS(on) MIN. TYP. 0.30 0.32 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2400 500 45 35 60 105 65 65 15 30 1.0 500 3.5 2.5 7.5 100 100 MAX. 0.35 0.40 3.5 V S UNIT TEST CONDITIONS VGS = 10 V ID = 10 V 2SK2369 2SK2370
VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 10 A VDS = VDSS, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 10 A VGS = 10 V VDD = 150 V RG = 10 RL = 15 ID = 20 A VDD = 400 V VGS = 10 V IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 di/dt = 50 A/s
A
nA pF pF pF ns ns ns ns nC nC nC V ns
C
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 PG VGS = 20 - 0 V 50
Test Circuit 2 Switching Time
D.U.T.
L VDD PG. RG RG = 10
RL
VGS
Wave Form
VGS
0 10 % VGS (on) 90 %
VDD
ID
90 % 90 % ID
BVDSS IAS ID VDD VDS
VGS 0 t t = 1us Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
Starting Tch
Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA PG. 50
RL VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2369/2SK2370
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - (%) PT - Total Power Dissipation - (W) 140 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
60
40
20
0
20
40
60
80
100 120 140 160
TC - Case Temperature - (C) FORWARD BIAS SAFE OPERATING AREA 100
TC - Case Temperature - (C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25
ID - Drain Current - (A)
m
10
Po
10
s
ID - Drain Current - (A)
d ite im 0 V) )L 1 on S( = RD (VGS ID (DC) at
w
ID (pulse)
PW
10
1
=
s
0
10
s
20
VGS = 10 V 8V 6V
m
er
s
15
Di
ss
ipa
tio
1.0
n
10
Lim
ite
d
5
5V
0.1 1
TC = 25 C Single Pulse 10 100 1 000 0 5 10 15 20 VDS - Drain to Source Voltage - (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS - Drain to Source Voltage - (V)
100
ID - Drain Current - (A)
10
1.0 Tch = 125 C 75 C 25 C 25 C VDS = 10 V Pulsed 15
0.1
0
5
10
VGS - Gate to Source Voltage - (V)
3
2SK2369/2SK2370
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth (t) - Transient Thermal Resistance - (C/W) 1 000 100 10 Rth (ch-c) = 0.89 C/W 1 0.1 0.01 TC = 25 C Single Pulse 0.001 10 100 1m 10 m 100 m 1 10 100 1 000 Rth (ch-a) = 41.7 C/W
PW - Pulse Width - (s) FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - (S) 100 Tch = -25 C 25 C 75 C 125 C VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.5 Pulsed 2.0
10
RDS (on) Drain to Source On-State Resistance - ()
1.5
1.0
1.0
0.5
ID = 20 A 10 A 5A
1.0
10 ID - Drain Current - (A)
100
0
5
10
15
20
25
30
VGS - Gate to Source Voltage - (V) GATE TO SOURCE CUT OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS (off) - Gate to Source Cutoff Voltage - (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VDS = 10 V ID = 1 mA
RDS (on) - Drain to Source on-State Resistance - ()
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 1.0 10 100 VGS = 10 V
-50 -25
0
25
50
75 100 125 150 175
ID - Drain Current - (A)
Tch - Channel Temperature - (C)
4
2SK2369/2SK2370
RDS (on) - Drain to Source On-State Resistance - ()
ISD - Diode Forward Current - (A)
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.8 VGS = 10 V Pulsed 0.7 ID = 20 A 0.6 10 A 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 175
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
10 VGS = 10 V 1 VGS = 0 V
0.1
0.01 0
0.5
1.0
1.5
Tch - Channel Temperature - (C) CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000
VSD - Source to Drain Voltage - (V)
SWITCHING CHARACTERISTICS 1 000
td (on), tr, td (off), tf - Switching Time - (ns)
Ciss, Coss, Crss - Capacitance - (pF)
VGS = 0 V f = 1 MHz Ciss
tr tf 100 td (off) td (on)
1 000
Coss 100 Crss 10
10
0.01
0.1
1.0
10
100
1 000
1.0 0.1
1.0
VDD = 150 V VGS = 10 V Rin = 10 10 100
VDS - Drain to Source Voltage - (V)
ID - Drain Current - (A)
REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT 600 500
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 20
VDS - Drain to Source Voltage - (V)
trr - Reverse Recovery Time - (ns)
500 400 300 200 100 0
400
16 VGS 14 12 10
300
200
8 6
100
di/dt = 50 A/s VGS = 0 V 0.1 1.0 10 100
VDS
4 2
0
10
20
30
40
50
60
0 70
IF - Forward Current - (A)
Qg - Gate Charge - (nC)
5
VGS - Gate to Source Voltage - (V)
VDD = 400 V 250 V 125 V
ID = 20 A
18
2SK2369/2SK2370
SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 300 EAS - Single Avalanche Energy - (mJ) IAS - Single Avalanche Current - (A) IAS 20 A RG = 25 VGS = 20 V 0 VDD = 150 V 100
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD VDD = 150 V RG = 25 VGS = 20 V 0 V
EAS =2
IAS = 20 A 10
200
85
mJ
100
1.0
0 25
50
75
100
125
150
175
0 100
1m
10 m
100 m
Starting Channel Temperature - (C)
L - Inductive Load - (H)
6
2SK2369/2SK2370
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
7
2SK2369/2SK2370
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11

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